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Zhurnal Tekhnicheskoi Fiziki, 2018 Volume 88, Issue 2, Pages 243–250 (Mi jtf5997)

This article is cited in 6 papers

Physics of nanostructures

Analytical model of atomic layer deposition of films on 3D structures with high aspect ratios

A. V. Fadeev, A. V. Myakon'kikh, K. V. Rudenko

Insitute of Physics and Technology, Institution of Russian Academy of Sciences, Moscow

Abstract: A theoretical model has been suggested that makes it possible to predict the profile of a film deposited on the walls of a high aspect ratio structure (trench) by atomic layer deposition versus the deposition parameters. In addition, the model allows one to calculate the optimal time of precursor doping that provides the conformal coating of the trench walls. The deposition of films with different thicknesses has been described by an approximant that includes two asymptotical deposition conditions with different relationships between the precursor molecule sticking coefficient and aspect ratio of the trench.

Received: 13.06.2017

DOI: 10.21883/JTF.2018.02.45416.2385


 English version:
Technical Physics, 2018, 63:2, 235–242

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