Generation of high-voltage pulses by sharp-recovery SiC drift diodes ($n$-base versus $p$-base diodes)

The time characteristics of pulse generators based on sharp-recovery 4$H$ : SiC drift diodes have been calculated. It has been found that the speed of $n$-base 4$H$-SiC diodes is superior to that of $p$-base diodes with the amplitude and initial pedestal in the output voltage ($<$ 5% of the amplitude) versus the time curve being the same.