RUS  ENG
Full version
JOURNALS // Zhurnal Tekhnicheskoi Fiziki // Archive

Zhurnal Tekhnicheskoi Fiziki, 2017 Volume 87, Issue 12, Pages 1790–1793 (Mi jtf6041)

This article is cited in 1 paper

Theoretical and Mathematical Physics

The numerical simulation of the nanosecond switching of a $p$-SOS diode

N. I. Podolska, A. G. Lyublinsky, I. V. Grekhov

Ioffe Institute, St. Petersburg

Abstract: Abrupt high-density reverse current interruption has been numerically simulated for switching from forward to reverse bias in a silicon $p^{+}P_{0}n^{+}$ structure ($p$-SOS diode). It has been shown that the current interruption in this structure occurs as a result of the formation of two dynamic domains of a strong electric field in regions in which the free carrier concentration substantially exceeds the concentration of the doping impurity. The first domain is formed in the $n^+$ region at the $n^+P_0$ junction, while the second domain is formed in the $P_0$ region at the interface with the $p^+$ layer. The second domain expands much faster, and this domain mainly determines the current interruption rate. Good agreement is achieved between the simulation results and the experimental data when the actual electric circuit determining the electron–hole plasma pumping in and out is accurately taken into account.

Received: 26.04.2017

DOI: 10.21883/JTF.2017.12.45199.2313


 English version:
Technical Physics, 2017, 62:12, 1787–1790

Bibliographic databases:


© Steklov Math. Inst. of RAS, 2024