Composition and structure of Ga$_{1-x}$Na$_{x}$As nanolayers produced near the GaAs surface by Na$^+$ implantation

The composition and structure of nanodimensional Ga$_{1-x}$Na$_{x}$As phases produced by implantation of Na$^+$ ions into the near-surface area of GaAs have been studied by Auger electron spectroscopy and fast electron diffraction. It has been found that the thickness of the ternary epitaxial layer is 10–12 nm for ion energy $E_0$ = 20 keV. The composition of the three-layer nanosystems is GaAs–Ga$_{0.5}$Na$_{0.5}$As–GaAs.