M. V. Dorokhin, S. V. Zaitsev, A. V. Rykov, A. V. Zdoroveyshchev, E. I. Malysheva, Yu. A. Danilov, V. I. Zubkov, D. S. Frolov, G. E. Yakovlev, A. V. Kudrin, “Heterostructures with InGaAs/GaAs quantum dots doped with transition elements: II. Study of the circularly polarized luminescence”, Zhurnal Tekhnicheskoi Fiziki, 2017, Volume 87, Issue 10,Pages <nobr>1539

This article is cited in 4 papers

Physics of nanostructures

Heterostructures with InGaAs/GaAs quantum dots doped with transition elements: II. Study of the circularly polarized luminescence

M. V. Dorokhin^a, S. V. Zaitsev^b, A. V. Rykov^a, A. V. Zdoroveyshchev^a, E. I. Malysheva^a, Yu. A. Danilov^a, V. I. Zubkov^c, D. S. Frolov^c, G. E. Yakovlev^c, A. V. Kudrin^a

^a Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
^b Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow region
^c Saint Petersburg Electrotechnical University "LETI"

Abstract: Optical and transport properties of the heterostructure with the InAs/GaAs quantum dots doped with manganese or chromium atoms in the course of growth using metal-organic vapor phase epitaxy (MOVPE) are analyzed. Circularly polarized luminescence was obtained due to doping of quantum dots with the Mn or Cr atoms. The sign of the degree of circular polarization was found to depend on the dopant. The effect is interpreted using specific features of the radiative recombination in quantum dots in the presence of resident electrons and holes.

Received: 12.07.2016

DOI: 10.21883/JTF.2017.10.44999.1989