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Zhurnal Tekhnicheskoi Fiziki, 2017 Volume 87, Issue 8, Pages 1275–1278 (Mi jtf6169)

Brief Communications

Influence of a low-temperature GaN cap layer on the electron concentration in AlGaN/GaN heterostructure

A. A. Andreev, E. A. Vavilova, I. S. Ezubchenko, M. L. Zanaveskin, I. O. Mayboroda

National Research Centre "Kurchatov Institute", Moscow

Abstract: The influence of low-temperature passivating GaN cap layers on the electrophysical parameters of a 2D electron gas (2DEG) in heterostructure high-electron mobility transistors has been studied. It has been found that thin GaN layers deposited in situ at 550$^\circ$C do not exhibit polar properties and do not change the carrier concentration in the 2DEG. However, GaN layers deposited at 830$^\circ$C decrease the carrier concentration in the 2DEG, which is in agreement with theoretical calculations. Using the reflected high-energy electron diffraction technique, it has been established that this effect may be associated with different structures and morphologies of GaN layers deposited at different temperatures.

Received: 27.12.2016

DOI: 10.21883/JTF.2017.08.44742.2152


 English version:
Technical Physics, 2017, 62:8, 1288–1291

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