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Zhurnal Tekhnicheskoi Fiziki, 2017 Volume 87, Issue 7, Pages 1061–1065 (Mi jtf6186)

Solid-State Electronics

Charge transfer and thermopower in TlGdS$_{2}$

S. N. Mustafaevaa, S. M. Asadovb

a Institute of Physics Azerbaijan Academy of Sciences, Baku, Azerbaijan
b Institute of Catalysis and Inorganic Chemistry, Azerbaijan National Academy of Sciences, Baku

Abstract: The temperature dependences of the dc conductivity and thermoelectric coefficient of TlGdS$_2$ in the temperature interval of 77–373 K have been studied for the first time. It has been found that, at low temperatures (114–250 K), the compound has conductivity of the $p$-type and charge transfer in its energy gap follows the hopping mechanism. The main parameters of localized electronic states in the energy gap have been determined.

Received: 26.01.2016
Revised: 25.11.2016

DOI: 10.21883/JTF.2017.07.44679.1744


 English version:
Technical Physics, 2017, 62:7, 1077–1081

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