A. K. Bakarov, A. K. Gutakovskii, K. S. Zhuravlev, A. P. Kovchavtsev, A. I. Toropov, I. D. Burlakov, K. O. Boltar, P. V. Vlasov, A. A. Lopukhin, “MBE-grown InSb photodetector arrays”, Zhurnal Tekhnicheskoi Fiziki, 2017, Volume 87, Issue 6,Pages <nobr>900

This article is cited in 8 papers

Solid-State Electronics

MBE-grown InSb photodetector arrays

A. K. Bakarov^ab, A. K. Gutakovskii^a, K. S. Zhuravlev^ab, A. P. Kovchavtsev^a, A. I. Toropov^a, I. D. Burlakov^c, K. O. Boltar^c, P. V. Vlasov^c, A. A. Lopukhin^c

^a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^b Novosibirsk State University
^c AO NPO Orion, Moscow, Russia

Abstract: The MBE method has been applied to grow InSb layers on InSb substrates. These layers have served as a basis for fabricating mid-wave IR photodetector arrays. The characteristics of photodetector arrays on epitaxial InSb layers have been compared with those of series-produced single-crystal InSb arrays.

Received: 12.07.2016

DOI: 10.21883/JTF.2017.06.44514.1986