Abstract:
The processes involved in the planarization of the surface of nanoporous SiO$_{2}$ by the atomicmolecular deposition of nanoscale TiO$_{2}$ films were studied in regimes with different degrees of penetration of TiO$_{2}$ into SiO$_{2}$ nanopores. The technological process parameters that correspond to different regimes of surface planarization were examined. The degree of penetration of TiO$_{2}$ into SiO$_{2}$ nanopores was monitored using reflection ellipsometry by measuring the depth distribution of the refraction index within the two-layer model.