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Zhurnal Tekhnicheskoi Fiziki, 2017 Volume 87, Issue 5, Pages 746–753 (Mi jtf6238)

This article is cited in 1 paper

Solid-State Electronics

Influence of the channel–gate barrier height on the detection properties of a field-effect transistor in the microwave and terahertz ranges

S. Koroleva, N. V. Vostokovab, N. V. D'yakonovac, V. I. Shashkinab

a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b Lobachevsky State University of Nizhny Novgorod
c Université Montpellier II, Montpellier, France

Abstract: The detection properties of a field-effect transistor with a low Schottky barrier gate in the microwave and terahertz ranges has been studied theoretically. Different detector circuits have been considered. The voltage and current distributions along the channel, the input impedance of the transistor, sensitivity, and noise equivalent power have been found. The influence of the Schottky barrier height on the above characteristics has been analyzed.

Received: 28.03.2016
Revised: 03.10.2016

DOI: 10.21883/JTF.2017.05.44449.1821


 English version:
Technical Physics, 2017, 62:5, 765–772

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© Steklov Math. Inst. of RAS, 2024