Composition and properties of nanoscale Si structures formed on the CoSi$_{2}$/Si(111) surface by Ar$^+$ ion bombardment

The variations in the composition and structure of CoSi$_{2}$/Si(111) surface layers under Ar$^+$ ion bombardment with subsequent annealing has been studied. It has been demonstrated that nanocluster phases enriched with Si atoms form on the CoSi$_2$ surface at low doses $D\le$ 10$^{15}$ cm$^{-2}$), and a pure Si nanofilm forms at high doses.