Abstract:
We have proposed a mathematical model of the sensor response of vacuummeters with sensitive elements based on broadband semiconductor oxide with electrical conductivity of the $n$- and $p$-type, as well as the multicomponent oxide systems. The correctness of the model description of the dependence of the resistivity of nanomaterials synthesized by the sol–gel method and has the structure of spherical aggregates of fractal origin on the ambient pressure has been demonstrated. It has been shown that, taking into account the corrections, the developed model can be used to qualitatively describe the sensor response of nanomaterials based on two-component SiO$_2$–SnO$_2$ oxide systems with a labyrinth structure.