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Zhurnal Tekhnicheskoi Fiziki, 2017 Volume 87, Issue 1, Pages 155–158 (Mi jtf6355)

This article is cited in 4 papers

Brief Communications

Analysis of the process of turning off an integrated thyristor with external MOSFET control

I. V. Grekhova, A. G. Lyublinskya, A. A. Skidanovb

a Ioffe Institute, St. Petersburg
b SC "VSP-Mikron", Voronezh

Abstract: The results of an experimental study of the process of turning off an integrated thyristor in a circuit with an inductive load have been presented. It has been demonstrated that the maximum switched current density is limited by high-frequency oscillating process under the conditions of dynamic avalanche breakdown, which produces unstable current pinches. This process starts from the beginning of the voltage rise at the collector junction and is initiated by electron flux injected by the emitter to the space-charge collector region. Possible ways to raise the maximum switched current density have been discussed.

Received: 14.06.2016

DOI: 10.21883/JTF.2017.01.44034.1930


 English version:
Technical Physics, 2017, 62:1, 183–186

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© Steklov Math. Inst. of RAS, 2025