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Zhurnal Tekhnicheskoi Fiziki, 2016 Volume 86, Issue 10, Pages 149–152 (Mi jtf6433)

This article is cited in 2 papers

Brief Communications

Substrate-induced bandgap in the spectrum of an epitaxial graphene layer

Z. Z. Alisultanovabc

a Daghestan Institute of Physics after Amirkhanov, Makhachkala, Dagestan, Russia
b Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow
c Daghestan State University, Makhachkala

Abstract: It has been shown that a bandgap can appear in the spectrum of a graphene bilayer formed on the surface of a semiconductor. Bandgap widths have been estimated for various SiC polytypes. The predicted effect is important for the practical applications of graphene.

Received: 02.02.2016


 English version:
Technical Physics, 2016, 61:10, 1591–1594

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