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Zhurnal Tekhnicheskoi Fiziki, 2016 Volume 86, Issue 9, Pages 7–12 (Mi jtf6437)

This article is cited in 4 papers

Theoretical and Mathematical Physics

Multiphysical simulation analysis of the dislocation structure in germanium single crystals

O. I. Podkopaeva, V. V. Artem'evb, A. D. Smirnovb, V. M. Mamedovb, A. P. Sid’kob, V. V. Kalaevb, E. D. Kravtsovac, A. F. Shimanskiic

a AO Germanii, Krasnoyarsk
b STR Group, Inc., St. Petersburg, Russia
c Siberian Federal University, Krasnoyarsk

Abstract: To grow high-quality germanium crystals is one of the most important problems of growth industry. The dislocation density is an important parameter of the quality of single crystals. The dislocation densities in germanium crystals 100 mm in diameter, which have various shapes of the side surface and are grown by the Czochralski technique, are experimentally measured. The crystal growth is numerically simulated using heat-transfer and hydrodynamics models and the Alexander–Haasen dislocation model in terms of the CGSim software package. A comparison of the experimental and calculated dislocation densities shows that the dislocation model can be applied to study lattice defects in germanium crystals and to improve their quality.

Received: 12.10.2015


 English version:
Technical Physics, 2016, 61:9, 1286–1291

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