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Zhurnal Tekhnicheskoi Fiziki, 2016 Volume 86, Issue 7, Pages 94–99 (Mi jtf6505)

This article is cited in 11 papers

Solid-State Electronics

Analysis (Simulation) of Ni-63 beta-voltaic cells based on silicon solar cells

A. A. Gorbatsevichab, A. B. Danilinc, V. I. Korneeva, E. P. Magomedbekovd, A. A. Moline

a National Research University of Electronic Technology
b P. N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow
c CJSC Innotra, Moscow
d D. Mendeleev University of Chemical Technology of Russia
e JSC Atommed Center, Moscow, Russia

Abstract: Beta-voltaic cells based on standard silicon solar cells with bilateral coating with beta-radiation sources in the form of $^{63}$Ni isotope have been studied experimentally and by numerical simulation. The optimal parameters of the cell, including its thickness, the doping level of the substrate, the depth of the $p$$n$ junction on its front side, and the $p^+$ layer on the back side, as well as the activity of the source material, have been calculated. The limiting theoretical values of the open-circuit voltage (0.26 V), short-circuiting current (2.1 $\mu$A), the output power of the cell (0.39 $\mu$W), and the efficiency of the conversion of the radioactive energy onto the electric energy (4.8%) have been determined for a beta-source activity of 40 mCi. The results of numerical analysis have been compared with the experimental data.

Received: 01.12.2015


 English version:
Technical Physics, 2016, 61:7, 1053–1059

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