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// Zhurnal Tekhnicheskoi Fiziki
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Zhurnal Tekhnicheskoi Fiziki,
2016
Volume 86,
Issue 4,
Pages
148–150
(Mi jtf6593)
This article is cited in
7
papers
Brief Communications
Composition, morphology, and electronic structure of the nanophases created on the SiO
$_{2}$
Surface by Ar
$^{+}$
ion bombardment
M. B. Yusupjanova
,
D. A. Tashmukhamedova
,
B. E. Umirzakov
Tashkent State Technical University
Abstract:
The influence of Ar
$^{+}$
bombardment on the composition and the structure of the SiO
$_{2}$
/Si surface is studied. A thin Si film is found to form on the SiO
$_{2}$
surface subjected to high-dose ion bombardment.
Keywords:
Auger Spectrum, Cluster Phase, Nonstoichiometric Oxide, Postimplantation Annealing, Auger Electron Spectroscopy Result.
Received:
08.07.2015
Fulltext:
PDF file (397 kB)
Cited by
English version:
Technical Physics, 2016,
61
:4,
628–630
Bibliographic databases:
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Steklov Math. Inst. of RAS
, 2025