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Zhurnal Tekhnicheskoi Fiziki, 2016 Volume 86, Issue 4, Pages 148–150 (Mi jtf6593)

This article is cited in 6 papers

Brief Communications

Composition, morphology, and electronic structure of the nanophases created on the SiO$_{2}$ Surface by Ar$^{+}$ ion bombardment

M. B. Yusupjanova, D. A. Tashmukhamedova, B. E. Umirzakov

Tashkent State Technical University

Abstract: The influence of Ar$^{+}$ bombardment on the composition and the structure of the SiO$_{2}$/Si surface is studied. A thin Si film is found to form on the SiO$_{2}$ surface subjected to high-dose ion bombardment.

Keywords: Auger Spectrum, Cluster Phase, Nonstoichiometric Oxide, Postimplantation Annealing, Auger Electron Spectroscopy Result.

Received: 08.07.2015


 English version:
Technical Physics, 2016, 61:4, 628–630

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