P. A. Ivanov, I. V. Grekhov, “Parameters of pulse generators based on 4H : SiC sharp-recovery drift diodes: The influence of electron drift velocity saturation”, Zhurnal Tekhnicheskoi Fiziki, 2016, Volume 86, Issue 2,Pages <nobr>85

This article is cited in 4 papers

Solid-State Electronics

Parameters of pulse generators based on 4H : SiC sharp-recovery drift diodes: The influence of electron drift velocity saturation

P. A. Ivanov, I. V. Grekhov

Ioffe Institute, St. Petersburg

Abstract: The generation of high-voltage electrical pulses by generators based on 4H : SiC sharp-recovery drift diode is demonstrated. It is shown that the electron drift velocity saturation influences the shape of output pulses.

Keywords: Pulse Generator, Output Pulse, Space Charge Region, Circuit Breaker, Electron Drift Velocity.

Received: 21.05.2015