G. G. Zegrya, V. P. Ulin, A. G. Zegrya, N. V. Ulin, V. M. Fraiman, Yu. M. Mikhailov, “Erratum to: Effect of Conductivity Type and Doping Level of Silicon Crystals on the Size of Formed Pore Channels during Anodic Etching in Hydrofluoric Acid Solutions”, Zhurnal Tekhnicheskoi Fiziki, 2021, Volume 91, Issue 2,Page 367

Papers published in the English version of the journal

Erratum to: Effect of Conductivity Type and Doping Level of Silicon Crystals on the Size of Formed Pore Channels during Anodic Etching in Hydrofluoric Acid Solutions

G. G. Zegrya^a, V. P. Ulin^a, A. G. Zegrya^a, N. V. Ulin^a, V. M. Fraiman^a, Yu. M. Mikhailov^b

^a Ioffe Institute, 194021, St. Petersburg, Russia
^b Institute of Problems of Chemical Physics, Russian Academy of Sciences, Chernogolovka, Moscow region

Language: English