Model of repulsive ion desorption in surface ionization

A model of ion desorption from the surface of a semiconductor Na$_x$Au$_y$ is constructed under the assumption of repulsion of ions from a double electric layer of charges of density $\rho$ on the surface formed with a weak pulling electric field $E$. It is shown that carriers from the semiconductor volume do not participate in the formation of a double electric layer of charges on the surface. The new model of ion desorption is confirmed by the discovered experimental dependence of ion yield on temperature.