M. V. Marchuk, O. V. Tkachev, A. S. Pilipenko, S. M. Dubrovskikh, A. S. Kustov, E. A. Shibakov, K. V. Safronov, A. S. Tishchenko, V. A. Flegentov, S. A. Gorokhov, “Determination of the upset dominant mechanism in the 0.18 <nobr>$\mu$</nobr>m microcontroller's RAM exposed by pulsed low-energy protons”, Zhurnal Tekhnicheskoi Fiziki, 2024, Volume 94, Issue 2,Pages <nobr>248

Solid-State Electronics

Determination of the upset dominant mechanism in the 0.18 $\mu$m microcontroller's RAM exposed by pulsed low-energy protons

M. V. Marchuk^ab, O. V. Tkachev^b, A. S. Pilipenko^b, S. M. Dubrovskikh^b, A. S. Kustov^b, E. A. Shibakov^b, K. V. Safronov^b, A. S. Tishchenko^b, V. A. Flegentov^b, S. A. Gorokhov^b

^a Ural Federal University named after the First President of Russia B. N. Yeltsin, 620002 Yekaterinburg, Russia
^b Russian Federal Nuclear Center E. I. Zababakhin All-Russian Scientific Research Institute of Technical Physics, 456770 Snezhinsk, Chelyabinsk oblast, Russia

Abstract: Upsets in the embedded RAM of a microcontroller exposed by pulses of low-energy protons are investigated. Experiment features at the laser-plasma source are examined. The estimation of linear energy losses from direct ionization by protons in the sensitive volume and absorbed dose rate calculation with account of the structure and chemical composition of the microcontroller crystal are presented. Experimental results are compared with previously obtained data from X-rays exposure experiments and upset bitmaps are analyzed. It is shown that failures in the microcontroller RAM are caused by single event effects.

Keywords: proton radiation, X-rays, microcontroller, single event upsets, low-energy protons, pulsed exposure, laser-plasma acceleration.

Received: 12.07.2023
Revised: 13.11.2023
Accepted: 06.12.2023

DOI: 10.61011/JTF.2024.02.57079.177-23