Influence of nanosecond ytterbium laser irradiation modes on the morphology of porous silicon films

It has been shown that the morphology of the surface of porous silicon films can be flexibly controlled by changing the irradiation parameters of a pulsed nanosecond ytterbium fiber laser. A relationship between the parameters of laser irradiation of porous films and the information-correlation characteristics of their frontal surface has been established. The semiconductor structures under study may be relevant for the implementation of neural networks and artificial intelligence systems, as well as for the implementation of promising chemical sensors.