Insertion device for EUV-lithography at fourth-generation SR facility

This paper is dedicated to the optimization of the fourth-generation storage ring insertion devices for EUV lithography. Optimal period lengths have been determined, and the APPLE-II and Delta insertion devices have been compared in circular and linear polarization modes according to spectral, power characteristics, source size, and angular divergence. The average power values of the working harmonic have been obtained: about 6 W for circular polarization and about 2.6 W – for linear polarization. The coherent properties of the generated synchrotron radiation have been evaluated: the coherent fractions have been calculated, and transverse coherence functions have been obtained.