Abstract:
The work presents a technology for sensitizing a structure consisting of a graphene nanostrip on a Si/GNR silicon substrate in the near-IR range of the electromagnetic spectrum based on doping a GNR graphene nanostrip with He$^4$. The response has been experimentally demonstrated to increase by more than 25 times at a wavelength of 1.35 $\mu$m in the Si/GNR/He$^4$ structure compared to undoped Si/GNR. Also, the Si/GNR He$^4$ structure exhibits pronounced multi-level memristor properties under the influence of IR radiation.
Keywords:graphene, graphene nanostrip, IR range, detector.