Flexible memristors created by $2D$ printing based on graphene materials

Memristor structures with crossbar architecture were printed on a $2D$ inkjet printer. To make contacts, a suspension based on graphene particles was used. The memristor active layer was formed based on V$_2$O$_5$ nanoparticles encapsulated by fluorinated graphene. Stable resistive switchings were obtained with a ratio of currents in the open and closed states ON/OFF of two orders of magnitude and a switching voltage of 1.0–1.5 V. Currents in the open state increased with increasing area of the structures, which corresponds to conduction through localized states. Tensile strains that occur during bending of more than 2% lead to a decrease in the open state current; these changes are reversible. Varying the structures parameters, and, above all, reducing the active layer thickness makes it possible to switch to a multi-level switching mode. The promise of using such memristors to create non-volatile and multi-level memory with low energy consumption is shown.