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JOURNALS // Zhurnal Tekhnicheskoi Fiziki // Archive
Zhurnal Tekhnicheskoi Fiziki, 2023 Volume 93, Issue 4, Pages 562–567 (Mi jtf6981)
Solid-State Electronics

Gettering effect in Cr/4$H$-SiC UV photodetectors under ptoton irradiation vith $E$ = 15 Mev

I. P. Nikitina, E. V. Kalinina, V. V. Zabrodskii

Ioffe Institute, St. Petersburg, Russia

Abstract: The mechanism of structure transformation in Cr/4$H$-SiC UV photodetectors, which is responsible for the cyclic gettering of radiation defects, under repeated proton irradiation, is proposed in this work.

Keywords: vacancies, clusters, gettering.

Received: 30.11.2022
Revised: 17.01.2023
Accepted: 01.02.2023

DOI: 10.21883/JTF.2023.04.55045.259-22



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© Steklov Math. Inst. of RAS, 2025