Effect of combined ion and electron irradiation on 2 eV luminescence band in hexagonal boron nitride

Point defects in wide-bandgap semiconductors, in particular in hexagonal boron nitride, are promising candidates for single-photon emitters, used in quantum informatics. The cathodoluminescence of ion beam induced defects in hexagonal boron nitride, as well as the effect of prolonged electron irradiation on the intensity of the luminescence was investigated. It has been shown that upon the ion irradiation the intensity of both band-to-band emission and defect related emission decreased, and during subsequent electron irradiation the intensity of 2 eV luminescence band increased, whereas the intensity of other bands remained unchanged.