Investigation of non-uniformity of properties of niobium nitride thin films obtained by atomic layer deposition

In this work we studied the non-uniformity of properties of niobium nitride thin film obtained by atomic layer deposition enhanced by plasma on 100 mm silicon substrate with a layer of silicon oxide. The non-uniformity of the surface resistivity distribution was 7% at a diameter of 92 mm. The film thickness distribution non-uniformity measured by X-ray reflectometry at the central part of the wafer and at 4 locations 40 mm away from the centre was 4%. X-ray diffraction performed at the same locations on the wafer showed no visible reflex shifts. The variation in the lattice parameter for the different regions was only 0.06%. Superconducting measurements showed a maximum deviation of 1.6% for the superconducting transition temperature and 7% for the critical current density at a diameter of 80 mm.