Memristor nanostructures based on the bigraphene/diamane phase transition

Carbon nanostructures based on a local structural phase transition bigraphene/diamane obtained by transferring two graphene layers onto a La$_3$Ga$_5$SiO$_{14}$ substrate and irradiating them with an electron beam through a polymethyl methacrylate layer are studied. Irradiation of the structure led to local functionalization of bigraphene with oxygen and hydrogen with the formation of $sp^3$ bonds and a bigraphene-diamane phase transition, which was previously predicted theoretically. Changes in the intensity and position of peaks in the Raman spectra of irradiated bigraphene and an increase in its resistance indicate a local phase transition. Theoretical calculations of the modified bigraphene structure on La$_3$Ga$_5$SiO$_{14}$ and experimental measurements of the proportion of $sp^3$-hybridized carbon atoms indicate the formation of diamane nanoclusters and the possibility of local formation of nanostructures whose memristive states can be controlled at low currents and bias voltages.