Morphology of the surface of semipolar GaN layers during epitaxy on a nano-patterned Si substrate

It has been studied the morphology of the surface of the semipolar gallium nitride layers synthesized on nano-patterned Si(100) or Si(113) substrates with a $V$-shaped or $U$-shaped surface profile, respectively. The morphology of the surface of the semipolar layers indicates that the different height-to-width ratio of the GaN(11-22) and GaN(10-11) blocks is associated with a higher growth rate of the GAN(11-22) face than GaN(10-11) and with different growth rates of the semipolar and polar crystal faces during the nucleation of the layer on a nano-patterned substrate.