Abstract:
The article considers broadband multilayer X-ray mirrors based on Mo/Be and Mo/Si structures with a transmission band coinciding with the Si $L\alpha$ (13.5 nm) and Sn (13.5 nm) emission lines. The described structures are of great interest for the currently developed liquid source of EUV radiation, since they make it possible to increase the efficiency of the source-X-ray optical system due to the “complete” capture of emission lines.