P. B. Boldyrevskii, D. O. Filatov, V. A. Belyakov, A. P. Gorshkov, I. V. Makartsev, A. V. Nezhdanov, M. V. Revin, А. D. Filatov, P. A. Yunin, “Effect of substrate misorientation on the properties of <nobr>$p$</nobr>-HEMT GaAs-based nanoheterostructures formed during MOCVD epitaxy”, Zhurnal Tekhnicheskoi Fiziki, 2022, Volume 92, Issue 10,Pages <nobr>1582

Physical science of materials

Effect of substrate misorientation on the properties of $p$-HEMT GaAs-based nanoheterostructures formed during MOCVD epitaxy

P. B. Boldyrevskii^a, D. O. Filatov^a, V. A. Belyakov^a, A. P. Gorshkov^a, I. V. Makartsev^a, A. V. Nezhdanov^a, M. V. Revin^a, А. D. Filatov^a, P. A. Yunin^b

^a National Research Lobachevsky State University of Nizhny Novgorod, Nizhny Novgorod, Russia
^b Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia

Abstract: As one of the approaches to improve $p$-HEMT, we studied the effect of misorientation of GaAs substrates on the surface morphology, structure, and electrical properties of pseudomorphic heterostructures, as well as the parameters of transistors based on them. In a single technological cycle, heterostructures were formed on vicinal substrates with (100) orientation and misoriented by 2$^\circ$ to (110) by the method of MOCVD (MOCVD) in a single technological cycle. It has been established that on misoriented substrates, the growth of structurally consistent and stressed epitaxial layers occurs according to a layered-step mechanism with the formation of macrosteps. On vicinal substrates, the formation of monatomic growth steps was observed. The comparative characteristics of $p$-HEMT obtained using two types of substrates are considered.

Keywords: GaAs/InGaAs/GaAlAs heterostructures, MOCVD epitaxy, $p$-HEMT, substrate misorientation, comparative characteristics of structures and $p$-HEMT based on them.

Received: 23.05.2022
Revised: 21.06.2022
Accepted: 22.06.2022

DOI: 10.21883/JTF.2022.10.53250.143-22