A. I. Sidorov, E. Ya. Leks, O. A. Podsvirov, A. Ya. Vinogradov, “Crystallization and silicon carbide formation in two-layer amorphous silicon-carbon films during electron irradiation”, Zhurnal Tekhnicheskoi Fiziki, 2022, Volume 92, Issue 11,Pages <nobr>1705

Physical science of materials

Crystallization and silicon carbide formation in two-layer amorphous silicon-carbon films during electron irradiation

A. I. Sidorov^a, E. Ya. Leks^b, O. A. Podsvirov^b, A. Ya. Vinogradov^c

^a ITMO University, St. Petersburg, Russia
^b Peter the Great St. Petersburg Polytechnic University, St. Petersburg, Russia
^c Ioffe Institute, St. Petersburg, Russia

Abstract: It is shown that the irradiation by focused electron beam with electron energy of 10 keV of two-layer amorphous silicon-carbon films 60 nm thick results in films partial crystallization. Moreover, in the irradiated zone the layer of crystalline silicon carbide with luminescent properties is formed. The observed effects are confirmed by methods of Raman spectroscopy and by luminescence spectra.

Keywords: silicon, carbon, silicon carbide, film, structure, electron beam, Raman spectroscopy.

Received: 06.07.2022
Revised: 02.08.2022
Accepted: 09.08.2022

DOI: 10.21883/JTF.2022.11.53444.180-22