A. A. Trofimov, I. A. Denisov, Yu. B. Andrusov, M. B. Grishechkin, D. O. Tsaregorodtsev, A. M. Kosyakova, S. A. Kurepin, A. S. Smirnov, V. Yu. Dolmatov, “Planarization of epitaxial HgCdTe layers grown on CdZnTe substrates by liquid-phase epitaxy”, Zhurnal Tekhnicheskoi Fiziki, 2025, Volume 95, Issue 3,Pages <nobr>549

Special issue on the materials of the International Conference "Nanocarbon and Diamond" (NiA'2024)
Solid-State Electronics

Planarization of epitaxial HgCdTe layers grown on CdZnTe substrates by liquid-phase epitaxy

A. A. Trofimov^a, I. A. Denisov^b, Yu. B. Andrusov^b, M. B. Grishechkin^b, D. O. Tsaregorodtsev^a, A. M. Kosyakova^a, S. A. Kurepin^c, A. S. Smirnov^cd, V. Yu. Dolmatov^e

^a State Research Center of Russian Federation, Federal State Unitary Enterprise "Research, Development, and Production Center "Orion", Moscow
^b JSC "Giredmet" SRC RF, the Federal State Research and Design Institute of Rare Metal Industry, Moscow, Russia
^c Research Engineering Institute named after V.V. Bahirev, Dzerzhinsk, Nizhny Novgorod region, Russia
^d Samara State Technical University
^e Federal State Unitary Enterprise "Special Design and Technological Bureau "Technolog", St. Petersburg

Abstract: On samples of heteroepitaxial structures HgCdTe grown on isotype substrates CdZnTe by liquid-phase epitaxy at JSC Giredmet, the possibility of processing the surface of the epitaxial layer of HgCdTe using submicron diamonds of detonation synthesis of domestic production for precision removal of terrace microrelief and obtaining a mirror-smooth surface with a subnano-rough relief suitable for creating IR devices is investigated.

Keywords: HgCdTe, IR devices, liquid-phase epitaxy, chemical-mechanical polishing.

Received: 11.10.2024
Revised: 11.10.2024
Accepted: 11.10.2024

DOI: 10.61011/JTF.2025.03.59861.315-24