Current transfer in the tunneling microscope probe – tunnel gap – layer of А$^3$B$^5$ and A$^2$B$^6$ semiconductors quantum dots system under illumination

In this work, the features of current transfer in the system of a tunneling microscope probe – tunnel gap – layer of quantum dots of А$^3$B$^5$ and A$^2$B$^6$ semiconductors under the influence of external electromagnetic radiation of the visible spectral range are investigated. It is established, that the peaks on the normalized differential tunneling current-voltage characteristics corresponding to discrete levels of the energy spectrum of the studied quantum dots can disappear under illumination, which is due to the inclusion of photogenerated electrons in the current transfer process.