A. V. Emelyanov, V. A. Demin, I. M. Antropov, G. I. Tselikov, Z. V. Lavrukhina, P. K. Kashkarov, “Effect of the thickness of the TiO$_x$/TiO$_2$ layers on their memristor properties”, Zhurnal Tekhnicheskoi Fiziki, 2015, Volume 85, Issue 1,Pages 114

This article is cited in 11 papers

Solid-State Electronics

Effect of the thickness of the TiO$_x$/TiO$_2$ layers on their memristor properties

A. V. Emelyanov^a, V. A. Demin^ab, I. M. Antropov^a, G. I. Tselikov^a, Z. V. Lavrukhina^a, P. K. Kashkarov^abc

^a National Research Centre "Kurchatov Institute", Moscow
^b Moscow Institute of Physics and Technology, Dolgoprudny, Moscow Region
^c Lomonosov Moscow State University

Abstract: The effect of the layer thickness of the TiO$_x$/TiO$_2$ heterostructure on its memristor properties is investigated. The dependence of the stoichiometry index of the prepared layers on their thickness is analyzed using Auger spectroscopy. The dependence of ratio $R_{\mathrm{off}}/R_{\mathrm{on}}$ of the resistances in the high- and low-resistance states of a memristor element on the thickness of its layers is nonmonotonic. The highest value of $R_{\mathrm{off}}/R_{\mathrm{on}}$ = 200 was attained for identical thickness of the TiO$_x$ and TiO$_2$ layers, equal to 30 nm.

Received: 14.02.2014