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Zhurnal Tekhnicheskoi Fiziki, 2015 Volume 85, Issue 4, Pages 62–66 (Mi jtf7740)

This article is cited in 1 paper

Solid-State Electronics

Effect of interminiband tunneling on the generation of current in a semiconducting superlattice

A. O. Selskiiab, A. A. Koronovskiiab, O. I. Moskalenkoab, A. E. Khramovab, T. M. Fromholdc, M. T. Greenawayc, A. G. Balanovad

a Saratov State University
b Yuri Gagarin State Technical University of Saratov
c School of Physics & Astronomy, University of Nottingham, Nottingham NG7 2RD, UÊ
d Department of Physics, Loughborough University, Loughborough, LE11 3TU, UK

Abstract: The effect of the bandgap width between the first and second energy minibands on the charge transport in a semiconducting superlattice to which electric and tilted magnetic fields are applied is studied theoretically. The time dependences of the current passing through the superlattice are calculated, and the dependences of the amplitude and frequency of electric current oscillations on the applied voltage are constructed. It is found that the interminiband electron tunneling facilitates a decrease in the amplitude of current oscillations, but simultaneously increases their frequency.

Received: 07.11.2015


 English version:
Technical Physics, 2015, 60:4, 541–545

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