RUS  ENG
Full version
JOURNALS // Zhurnal Tekhnicheskoi Fiziki // Archive

Zhurnal Tekhnicheskoi Fiziki, 2015 Volume 85, Issue 8, Pages 94–99 (Mi jtf7858)

This article is cited in 3 papers

Solid-State Electronics

Simulation modeling of submicrosecond operating conditions for high-voltage reversely switched dynistors

A. V. Gorbatyukab, B. V. Ivanovc

a Ioffe Institute, St. Petersburg
b Peter the Great St. Petersburg Polytechnic University
c Saint Petersburg Electrotechnical University "LETI"

Abstract: Important features of the mechanisms of switching submicrosecond current pulses are investigated using 2D computer simulation of physical processes in high-voltage reversely switched dynistors (RSDs). At the fronts of these pulses, large voltage surges and hazardous delays in the current rise are typically observed. It is found that these undesirable manifestations can be eliminated by appropriate reduction of the doping level of the p base. Following this approach for RSDs with a switching voltage of 2.5–5.0 kV, the duration of initiation pulses can be reduced to 75–150 ns and lower values for a reverse pump charge of 5–10 $\mu$C/cm$^2$. The current rise rate in this case can be increased to 20–30 A cm$^{-2}$ns$^{-1}$ (i.e., an order of magnitude higher than this parameter for standard RSDs). For amplitudes of switching pulses on the order of 1 kA and durations on the order of 100 ns, the energy transferred to the load may reach fractions and units of joules per pulse for a heat loss in the RSD of about 10% of these values.

Received: 24.12.2014


 English version:
Technical Physics, 2015, 60:8, 1198–1203

Bibliographic databases:


© Steklov Math. Inst. of RAS, 2025