Formation of InAs nanoclusters in silicon by high-dose ion implantation: Experimental data and simulation results

A physicomathematical model and dedicated software are developed for simulating high-dose implantation of two types of atoms to form InAs nanoclusters in a silicon matrix. The model is based on solving a set of convection–diffusion–reaction equations. The synthesis of InAs nanoclusters produced by highdose implantation of As$^+$ and In$^+$ ions into crystalline silicon is numerically simulated. Using the methods of transmission electron microscopy and Raman scattering, it is found that InAs nanoclusters are crystalline and have a mean diameter of 7 nm. After As implantation (170 keV, 3.2 $\times$ 10$^{16}$ cm$^{-2}$) and In implantation (250 keV, 2.8 $\times$ 10$^{16}$ cm$^{-2}$) into silicon at 500$^\circ$C, the nanoclusters are distributed with a density of 2.87 $\times$ 10$^{11}$ cm$^{-2}$. From experimental data and theoretical results, the coefficients of radiation-stimulated diffusion of In and As in silicon, as well as the fraction of the implant in the bound state (i.e., entering into InAs nanoclusters), are determined. Experimental data are compared with simulation results.