Abstract:
We study the effect of bombardment with Ar$^+$ and Ba$^+$ ions on the composition and electron structure of the CdTe film surface. The optimal ion implantation and annealing regimes for obtaining a nanofilm of the Cd$_{0.5}$Âà$_{0.5}$Te type are determined. It is found that the value of $E_g$ of the three-component film decreases from 1.9 to 1.7 eV upon an increase in its thickness from 20 to 40 nm.