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Zhurnal Tekhnicheskoi Fiziki, 2015 Volume 85, Issue 12, Pages 146–149 (Mi jtf7972)

This article is cited in 5 papers

Brief Communications

Effect of implantation of active metal ions on the elemental and chemical compositions of the CdTe surface

Z. È. Ìuhtarova, Z. A. Isakhanova, B. E. Umirzakova, T. Kodirova, E. S. Ergashevb

a Institute of Ion-Plasma and Laser Technologies, Uzbekistan Academy of Sciences, Tashkent
b Tashkent State Technical University named after Islam Karimov

Abstract: We study the effect of bombardment with Ar$^+$ and Ba$^+$ ions on the composition and electron structure of the CdTe film surface. The optimal ion implantation and annealing regimes for obtaining a nanofilm of the Cd$_{0.5}$Âà$_{0.5}$Te type are determined. It is found that the value of $E_g$ of the three-component film decreases from 1.9 to 1.7 eV upon an increase in its thickness from 20 to 40 nm.

Received: 20.03.2015


 English version:
Technical Physics, 2015, 60:12, 1880–1883

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