Application of low-barrier metal–semiconductor–metal structures for the detection of microwave signals

New structures of sensitive elements based on asymmetric low-barrier metal–semiconductor–metal structures are proposed. The structures can be used for the detection of microwave or terahertz signals. A vertical structure with different barrier heights of two metal-semiconductor junctions and a planar structure with different areas of junctions are studied. It is demonstrated that the sensitive element based on the vertical structure is superior to a detecting low-barrier Mott diode. The sensitivity of the planar element is comparable with the sensitivity of the diode but the former is easier to produce. The characteristics of a detector based on the planar low-barrier structure integrated in a broadband antenna are calculated. Possible sensitivities in a band of 1 THz are determined.