Photosensitive anisotype $n$-ZnSe/$p$-InSe and $n$-ZnSe/$p$-GaSe heterojunctions

Anisotype $n$-ZnSe/$p$-InSe and $n$-ZnSe/$p$-GaSe heterojunctions are obtained for the first time. They are grown on layered crystalline GaSe and InSe substrates by annealing in Zn vapor. It is found that these heterojunctions are sensitive to light in the near-infrared and visible spectral ranges.