Spectral interference in a carbide-silicon $n^-$–$n^+$ structure

The spectral interference in carbide-silicon structure in which the epitaxial layer and substrate differ only by the imaginary part of the refractive index is demonstrated. The thickness of the layer that is determined from the period of interference is verified using the direct measurements of the layer thickness with the aid of raster electron microscopy. The spectral dependence of the real part of refractive index of silicon carbide is extended to wavelength interval 1.5–7 $\mu$m.