M. V. Dorokhin, E. I. Malysheva, B. N. Zvonkov, A. V. Zdoroveyshchev, Yu. A. Danilov, D. E. Nikolichev, A. V. Boryakov, S. Yu. Zubkov, “Spin injection of electrons in GaMnAs/GaAs/InGaAs light-emitting diode structures with a tunnel junction”, Zhurnal Tekhnicheskoi Fiziki, 2014, Volume 84, Issue 12,Pages <nobr>102

This article is cited in 2 papers

Optics

Spin injection of electrons in GaMnAs/GaAs/InGaAs light-emitting diode structures with a tunnel junction

M. V. Dorokhin^a, E. I. Malysheva^a, B. N. Zvonkov^a, A. V. Zdoroveyshchev^a, Yu. A. Danilov^a, D. E. Nikolichev^b, A. V. Boryakov^b, S. Yu. Zubkov^b

^a Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
^b National Research Lobachevsky State University of Nizhny Novgorod

Abstract: Circularly polarized electroluminescence from GaMnAs/$n^{++}$GaAs/$n$-GaAs/InGaAs/$p$-GaAs heterostructures is studied. A hysteresis-like magnetic field dependence of the degree of circular polarization can be attributed to the injection of spin-polarized electrons from the magnetized GaMnAs layer. This effect is observed in the temperature range 10–90 K.

Received: 21.09.2013
Accepted: 08.04.2014