Optical properties of porous silicon processed in tetraethyl orthosilicate

We investigate the change in the composition and optical properties of porous silicon (por-Si) obtained by electrochemical etching of a palate made of $n$-type (111) silicon single crystal under high-temperature annealing and processing in tetraethyl orthosilicate (TEOS). It is shown that TEOS processing and annealing prevent contamination of a sample stored for a long time in atmosphere. The processing of por-Si in TEOS does not change the position of the photoluminescence (PL) peak and suppresses PL to a smaller extent as compared to annealing of por-Si. This increases the reliability of optoelectronic devices based on por-Si.