V. V. Basanets, N. S. Boltovets, A. V. Gutsul, A. V. Zorenko, V. G. Ral'chenko, A. E. Belyaev, V. P. Klad'ko, R. V. Konakova, Ya. Ya. Kudryk, A. V. Kuchuk, V. V. Milenin, “Integrated microwave (centimeter-range) modulator on polycrystalline diamond layers”, Zhurnal Tekhnicheskoi Fiziki, 2013, Volume 83, Issue 3,Pages <nobr>113

This article is cited in 1 paper

Radiophysics

Integrated microwave (centimeter-range) modulator on polycrystalline diamond layers

V. V. Basanets^a, N. S. Boltovets^a, A. V. Gutsul^a, A. V. Zorenko^a, V. G. Ral'chenko^b, A. E. Belyaev^c, V. P. Klad'ko^c, R. V. Konakova^c, Ya. Ya. Kudryk^c, A. V. Kuchuk^c, V. V. Milenin^c

^a Orion State Research Institute, Kyiv
^b Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow
^c Institute of Semiconductor Physics NAS, Kiev

Abstract: Measuring data for the parameters of a microstrip switching superhigh-frequency integrated circuit on a 100-$\mu$m-thick polycrystalline diamond film are reported. Measurements are taken in the frequency range 3–7 GHz. It is shown that the decay in developmental modulators is no greater than 1.5 dB in the on state and no less than 29 dB in the off state. Physicochemical analysis of the multilayer contact metallization technology as applied to synthetic diamond and a silicon $p$–$i$–$n$ diode is carried out. The metallization is shown to be stable up to 400$^\circ$C.

Received: 24.11.2011
Accepted: 16.04.2012