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Zhurnal Tekhnicheskoi Fiziki, 2013 Volume 83, Issue 9, Pages 146–149 (Mi jtf8548)

This article is cited in 15 papers

Brief Communications

Analysis of the structure and properties of heterostructured nanofilms prepared by epitaxy and ion implantation methods

B. E. Umirzakov, D. A. Tashmukhamedova, M. K. Ruzibaeva, A. K. Tashatov, S. B. Donaev, B. B. Mavlyanov

Institute of Ion-Plasma and Laser Technologies, Uzbekistan Academy of Sciences, Tashkent

Abstract: The energy band diagram of multilayer nanofilm systems formed on the basis of Si, GaAs, and CaF$_2$ is constructed. The optimal regimes of obtaining homogeneous films of a complex composition are determined

Received: 23.05.2012
Accepted: 29.01.2013


 English version:
Technical Physics, 2013, 58:9, 1383–1386

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