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// Zhurnal Tekhnicheskoi Fiziki
// Archive
Zhurnal Tekhnicheskoi Fiziki,
2013
Volume 83,
Issue 9,
Pages
146–149
(Mi jtf8548)
This article is cited in
15
papers
Brief Communications
Analysis of the structure and properties of heterostructured nanofilms prepared by epitaxy and ion implantation methods
B. E. Umirzakov
,
D. A. Tashmukhamedova
,
M. K. Ruzibaeva
,
A. K. Tashatov
,
S. B. Donaev
,
B. B. Mavlyanov
Institute of Ion-Plasma and Laser Technologies, Uzbekistan Academy of Sciences, Tashkent
Abstract:
The energy band diagram of multilayer nanofilm systems formed on the basis of Si, GaAs, and CaF
$_2$
is constructed. The optimal regimes of obtaining homogeneous films of a complex composition are determined
Received:
23.05.2012
Accepted:
29.01.2013
Fulltext:
PDF file (166 kB)
Cited by
English version:
Technical Physics, 2013,
58
:9,
1383–1386
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Steklov Math. Inst. of RAS
, 2025