RUS  ENG
Full version
JOURNALS // Zhurnal Tekhnicheskoi Fiziki // Archive

Zhurnal Tekhnicheskoi Fiziki, 2011 Volume 81, Issue 9, Pages 113–118 (Mi jtf9241)

This article is cited in 2 papers

Surfaces, Electron and Ion Emission

New technique for heterogeneous vapor-phase synthesis of nanostructured metal layers from low-dimensional volatile metal complexes

A. M. Badalyana, L. F. Bakhturova, V. V. Kaichevb, O. V. Polyakova, O. P. Pchelyakovc, G. I. Smirnovc

a Nikolaev Institute of Inorganic Chemistry, Siberian Branch of the Russian Academy of Sciences, Novosibirsk
b Boreskov Institute of Catalysis SB RAS, Novosibirsk
c Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk

Abstract: A new technique for depositing thin nanostructured layers on semiconductor and insulating substrates that is based on heterogeneous gas-phase synthesis from low-dimensional volatile metal complexes is suggested and tried out. Thin nanostructured copper layers are deposited on silicon and quartz substrates from low-dimensional formate complexes using a combined synthesis-mass transport process. It is found that copper in layers thus deposited is largely in a metal state (Cu$^0$) and has the form of closely packed nanograins with a characteristic structure.

Received: 29.11.2010


 English version:
Technical Physics, 2011, 56:9, 1333–1338

Bibliographic databases:


© Steklov Math. Inst. of RAS, 2025