Application of the Morse potential to describe desorption processes from two-dimensional adsorbed layers

Models of desorption from two-dimensional adsorbed layers in the approximation of the Morse potential are proposed. The relationship between the parameters of desorption kinetics and the potential of the adatom-substrate interaction in this approximation has been established. The conditions for the implementation of one or another desorption mechanism are formulated. The proposed models have been tested on the basis of experimental results on desorption kinetics for rare earth metal – Si(111) systems. The results obtained are important for a deeper understanding of the processes of desorption of metal atoms from the semiconductor surfaces which are subject to structural transformations.