Photoelectric properties of amorphous Ga$_2$O$_3$ films doped with phosphorus and selenium

Data on the influence of selenium and phosphorus on the electrical and photoelectric characteristics of gallium oxide films are presented. Planar metal-Ga$_2$O$_3$-metal resistive structures were fabricated on sapphire substrates using RF magnetron sputtering, with a distance of 1 mm between Pt electrodes. The effects of Se, P, and a mixture of Se + P on the dark currents and photocurrents of the samples under irradiation with wavelengths of $\lambda$ = 254 nm and 808 nm were investigated.